The device has what are claimed to be far superior characteristics compared to existing IGBTs, silicon power MOSFETs or even the best competitive SiC 1200V MOSFET.. In addition, the small die size shows the potential for future miniaturization of power circuits, given how much it cuts conduction and switching losses. 

AOS says that it continues to execute its strategy to be a full-service power solution provider by extending its portfolio of AlphaMOS MOSFETs and AlphaIGBT silicon devices with the new 1200V MOSFET. I am an expert from cardboard-packaging-boxes , while we provides the quality product, such as China Cardboard Cake Boxes , China Cardboard Display Stands, Cardboard Packaging Boxes,and more.The device may be used similarly to a conventional MOSFET or IGBT, with standard gate drives, and is engineered so it can be switched over a wide speed range (as fast as a superjunction MOSFET or as slow as an IGBT). "Using the superb characteristics of SiC JFETs for high-voltage applications, and solving the switching problems that have plagued cascode devices in the past, AOS is in a position to offer the power electronics community a dream switch,” claims Dr Anup Bhalla, VP of High-Voltage Discretes at AOS.Figure 1: Die sizes of a 1200V IGBT with co-packaged diode, a competitor 1200V SiC MOSFET, and AOS’ UniSiC stack-cascode device. It is intended to provide great ease of use (working with standard drive circuitry) and to drastically improve circuit efficiencies over the whole range of load current. The UniSiC MOSFET provides what is claimed to be unprecedentedly low Rdson and gate charge Qg, an excellent body diode with virtually no stored charge, and a low diode forward voltage drop. 

"First released in 2008, we have seen our JFET products gain rapid adoption in the market, and this first-ever stack-cascode demonstration from AOS really takes the performance and ease of use to the next level,” says SemiSouth’s president & chief technology officer Dr Jeff Casady.18 January 2012 Power semiconductor designer Alpha and Omega Semiconductor Ltd (AOS) of Sunnyvale, CA, USA and SemiSouth Laboratories Inc of Starkville, MS, USA (which designs and manufactures silicon carbide devices for high-power, high-efficiency, harsh-environment power management and conversion applications) have jointly demonstrated UniSiC, a 1200V, 90mO MOSFET in a TO262 package, to meet the growing need for energy-efficient switching devices for high-performance power conversion applications in the alternative energy, industrial and consumer segments."The devices can be used like conventional discrete IGBTs and FETs using the same gate drives, allowing the user to realize huge efficiency gains without too much Table Tennis Net Stand re-engineering,” he adds. The low-voltage MOSFET is specially engineered to allow optimal operation of the composite device with clean switching, and low Rdson and gate charge

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